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| MMFT960T1 Preferred Device Power MOSFET 300 mA, 60 Volts N-Channel SOT-223 This Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, dc-dc converters, solenoid and relay drivers. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. Features http://onsemi.com 300 mA, 60 VOLTS RDS(on) = 1.7 W N-Channel D * * * * * Silicon Gate for Fast Switching Speeds Low Drive Requirement The SOT-223 Package can be Soldered Using Wave or Reflow The Formed Leads Absorb Thermal Stress During Soldering Eliminating the Possibility of Damage to the Die Pb-Free Package is Available G S MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Drain-to-Source Voltage Gate-to-Source Voltage - Non-Repetitive Drain Current Total Power Dissipation @ TA = 25C (Note 1) Derate above 25C Operating and Storage Temperature Range Symbol VDS VGS ID PD Value 60 30 300 0.8 6.4 TJ, Tstg -65 to 150 Unit V V mAdc W mW/C C 1 2 3 4 TO-261AA CASE 318E STYLE 3 MARKING DIAGRAM AND PIN ASSIGNMENT 4 Drain AYW FT960 G G 1 Gate 2 Drain 3 Source THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Maximum Temperature for Soldering Purposes Time in Solder Bath RqJA TL 156 260 10 C/W C S Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Device mounted on a FR-4 glass epoxy printed circuit board using minimum recommended footprint. A = Assembly Location Y = Year W = Work Week G = Pb-Free Package FT960 = Device Code (Note: Microdot may be in either location) ORDERING INFORMATION Device MMFT960T1 MMFT960T1G Package SOT-223 SOT-223 (Pb-Free) Shipping 1000 Tape & Reel 1000 Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2006 1 January, 2006 - Rev. 5 Publication Order Number: MMFT960T1/D MMFT960T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (VGS = 0, ID = 10 mA) Zero Gate Voltage Drain Current (VDS = 60 V, VGS = 0) Gate-Body Leakage Current (VGS = 15 Vdc, VDS = 0) ON CHARACTERISTICS (Note 2) Gate Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) Static Drain-to-Source On-Resistance (VGS = 10 Vdc, ID = 1.0 A) Drain-to-Source On-Voltage (VGS = 10 V, ID = 0.5 A) (VGS = 10 V, ID = 1.0 A) Forward Transconductance (VDS = 25 V, ID = 0.5 A) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge 2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. (VGS = 10 V, ID = 1.0 A, VDS = 48 V) (VDS = 25 V, VGS = 0, f = 1.0 MHz) Ciss Coss Crss Qg Qgs Qgd - - - - - - 65 33 7.0 3.2 1.2 2.0 - - - - - - nC pF VGS(th) RDS(on) VDS(on) - - gfs - - - 600 0.8 1.7 - mmhos 1.0 - - - 3.5 1.7 Vdc W Vdc V(BR)DSS IDSS IGSS 60 - - - - - - 10 50 Vdc mAdc nAdc Symbol Min Typ Max Unit TYPICAL ELECTRICAL CHARACTERISTICS 5 TJ = 25C I D, DRAIN CURRENT (AMPS) VGS = 10 V 3 2 1 0 8V 7V 6V 5V 4V 0 4 6 8 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 2 10 0 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 10 I D, DRAIN CURRENT (AMPS) 4 0.8 0.6 0.4 VDS = 10 V 0.2 1 TJ = -55C TJ = 25C TJ = 125C Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics http://onsemi.com 2 MMFT960T1 TYPICAL ELECTRICAL CHARACTERISTICS RDS(on) , DRAIN-SOURCE RESISTANCE (NORMALIZED) RDS(on) , DRAIN-SOURCE RESISTANCE (OHMS) 5 VGS = 10 V 4 3 TJ = 125C 2 25C 1 0 -55 C 0 0.5 1 1.5 2 ID, DRAIN CURRENT (AMPS) 2.5 10 ID = 1 A VGS = 10 V 1 0.1 -75 -50 -25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (C) 125 150 Figure 3. On-Resistance versus Drain Current Figure 4. On-Resistance Variation with Temperature 250 225 I D, DRAIN CURRENT (AMPS) 200 1 C, CAPACITANCE (pF) 175 150 125 100 75 50 25 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN DIODE FORWARD VOLTAGE (VOLTS) 0 0 5 Crss 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 30 Coss Ciss VGS = 0 V f = 1 MHz TJ = 25C TJ = 125C 0.1 TJ = 25C Figure 5. Source-Drain Diode Forward Voltage 10 8 7 6 5 4 3 2 1 0 0 0.5 1 1.5 2 2.5 3 Qg, TOTAL GATE CHARGE (nC) 3.5 4 ID = 1 A TJ = 25C gFS , TRANSCONDUCTANCE (mhos) 9 VDS = 30 V VDS = 48 V Figure 6. Capacitance Variation VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 2 VDS = 10 V 1.5 1 TJ = -55C 0.5 125C 0 25C 0 0.5 1 1.5 ID, DRAIN CURRENT (AMPS) 2 2.5 Figure 7. Gate Charge versus Gate-to-Source Voltage Figure 8. Transconductance http://onsemi.com 3 MMFT960T1 PACKAGE DIMENSIONS SOT-223 (TO-261) CASE 318E-04 ISSUE L D b1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 1.75 2.00 7.00 7.30 10 - INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 0.069 0.276 - 4 HE 1 2 3 E b e1 e q C DIM A A1 b b1 c D E e e1 L1 HE A 0.08 (0003) A1 q MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 1.50 6.70 0 MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.060 0.264 0 MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 0.078 0.287 10 L1 STYLE 3: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 mm inches SCALE 6:1 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 4 MMFT960T1/D |
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